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insulated gate bipolar transistor 1 www.irf.com 07/28/2010 v ces = 1200v i c = 90a, t c = 100c t j(max) =175c v ce(on) typ. = 1.7v features ? low v ce (on) trench igbt technology ? low switching losses ? maximum junction temperature 175 c ? square rbsoa ? 100% of the parts tested for i lm ? positive v ce (on) temperature co-efficient ? tight parameter distribution ? lead -free benefits ? high efficiency in a wide range of applications ? suitable for a wide range of switching frequencies due to low v ce (on) and low switching losses ? rugged transient performance for increased reliability ? excellent current sharing in parallel operation e c g n-channel gc e gate collector emitter to-247ac irg7ph50upbf to-247ad IRG7PH50U-EP g c e c g c e c irg7ph50upbf IRG7PH50U-EP applications ? u.p.s ? welding ? solar inverter ? induction heating absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 1200 v i c @ t c = 25c continuous collector current (silicon limited) 140 i c @ t c = 100c continuous collector current (silicon limited) 90 i nominal nominal current 50 i cm pulse collector current, v ge = 15v 150 i lm clamped inductive load current, v ge = 20v 200 v ge continuous gate-to-emitter voltage 30 v p d @ t c = 25c maximum power dissipation 556 p d @ t c = 100c maximum power dissipation 278 t j operating junction and -55 to +175 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw 10 lbfin (1.1 nm) thermal resistance parameter min. typ. max. units r jc (igbt) thermal resistance junction-to-case-(each igbt) to-247ac ??? ??? 0.27 r cs thermal resistance, case-to-sink (flat, greased surface) ??? 0.24 ??? r ja thermal resistance, junction-to-ambient (typical socket mount) ??? 40 ??? a w c/w
2 www.irf.com irg7ph50upbf/IRG7PH50U-EP notes: v cc = 80% (v ces ), v ge = 20v, l = 200h, r g = 5.0 ?. pulse width 400s; duty cycle 2%. refer to an-1086 for guidelines for measuring v (br)ces safely. r is measured at
electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 1200 ? ? v v ge = 0v, i c = 100a ? v (br)ces / ? t j temperature coeff. of breakdown voltage ?1.0?v/c v ge = 0v, i c = 1ma (25c-150c) ?1.72.0 i c = 50a, v ge = 15v, t j = 25c v ce(on) collector-to-emitter saturation voltage ? 2.0 ? v i c = 50a, v ge = 15v, t j = 150c ?2.1? i c = 50a, v ge = 15v, t j = 175c v ge(th) gate threshold voltage 3.0 ? 6.0 v v ce = v ge , i c = 2.0ma ? v ge(th) / ? tj threshold voltage temp. coefficient ? -17 ? mv/c v ce = v ge , i c = 1ma (25c - 175c) gfe forward transconductance ? 55 ? s v ce = 50v, i c = 50a, pw = 80s i ces collector-to-emitter leakage current ? 2.0 100 v ge = 0v, v ce = 1200v ?1700? v ge = 0v, v ce = 1200v, t j = 175c i ges gate-to-emitter leakage current ? ? 200 na v ge = 30v switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge (turn-on) ? 290 440 i c = 50a q ge gate-to-emitter charge (turn-on) ? 40 60 nc v ge = 15v q gc gate-to-collector charge (turn-on) ? 110 170 v cc = 600v e on turn-on switching loss ? 3600 4600 i c = 50a, v cc = 600v, v ge = 15v e off turn-off switching loss ? 2200 3200 j r g = 5.0 ? , l = 200h,t j = 25c e total total switching loss ? 5800 7800 energy losses include tail & diode reverse recovery t d(on) turn-on delay time ? 35 55 diode clamp the same as irg7ph50udpbf t r rise time ? 40 60 ns t d(off) turn-off delay time ? 430 500 t f fall time ? 45 65 e on turn-on switching loss ? 5600 ? i c = 50a, v cc = 600v, v ge =15v e off turn-off switching loss ? 3900 ? j r g =5.0 ? , l=200h, t j = 175c e total total switching loss ? 9500 ? energy losses include tail & diode reverse recovery t d(on) turn-on delay time ? 30 ? diode clamp the same as irg7ph50udpbf t r rise time ? 45 ? ns t d(off) turn-off delay time ? 500 ? t f fall time ? 210 ? c ies input capacitance ? 6000 ? pf v ge = 0v c oes output capacitance ? 190 ? v cc = 30v c res reverse transfer capacitance ? 130 ? f = 1.0mhz i c = 200a rbsoa reverse bias safe operating area full square v cc = 960v, vp =1200v rg = 5.0 ? , v ge = +20v to 0v, t j =175c conditions a
www.irf.com 3 irg7ph50upbf/IRG7PH50U-EP fig. 2 - maximum dc collector current vs. case temperature fig. 3 - power dissipation vs. case temperature fig. 4 - forward soa t c = 25c, t j 175c; v ge =15v fig. 5 - reverse bias soa t j = 175c; v ge =20v fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) 25 50 75 100 125 150 175 t c (c) 0 20 40 60 80 100 120 140 i c ( a ) 25 50 75 100 125 150 175 t c (c) 0 100 200 300 400 500 600 p t o t ( w ) 10 100 1000 10000 v ce (v) 1 10 100 1000 i c ( a ) 0.1 1 10 100 f , frequency ( khz ) 0 20 40 60 80 100 120 l o a d c u r r e n t ( a ) duty cycle : 50% tj = 150c tc = 100c vcc = 600v gate drive as specified power dissipation = 183w i square wave: v cc diode as specified 1 10 100 1000 10000 v ce (v) 0.01 0.1 1 10 100 1000 i c ( a ) 10sec 100sec tc = 25c tj = 175c single pulse dc 1msec
4 www.irf.com irg7ph50upbf/IRG7PH50U-EP fig. 8 - typ. igbt output characteristics t j = 175c; tp = 30s fig. 10 - typical v ce vs. v ge t j = 25c fig. 11 - typical v ce vs. v ge t j = 175c fig. 9 - typical v ce vs. v ge t j = -40c fig. 6 - typ. igbt output characteristics t j = -40c; tp = 30s fig. 7 - typ. igbt output characteristics t j = 25c; tp = 30s 0246810 v ce (v) 0 50 100 150 200 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v 0246810 v ce (v) 0 50 100 150 200 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v 0246810 v ce (v) 0 50 100 150 200 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v 0 5 10 15 20 v ge (v) 0 2 4 6 8 10 12 v c e ( v ) i ce = 25a i ce = 50a i ce = 100a 0 5 10 15 20 v ge (v) 0 2 4 6 8 10 12 v c e ( v ) i ce = 25a i ce = 50a i ce = 100a 0 5 10 15 20 v ge (v) 0 2 4 6 8 10 12 v c e ( v ) i ce = 25a i ce = 50a i ce = 100a
www.irf.com 5 irg7ph50upbf/IRG7PH50U-EP fig. 14 - typ. switching time vs. i c t j = 175c; l = 200h; v ce = 600v, r g = 5.0 ? ; v ge = 15v fig. 15 - typ. energy loss vs. r g t j = 175c; l = 200h; v ce = 600v, i ce = 50a; v ge = 15v fig. 16 - typ. switching time vs. r g t j = 175c; l = 200h; v ce = 600v, i ce = 50a; v ge = 15v fig. 13 - typ. energy loss vs. i c t j = 175c; l = 200h; v ce = 600v, r g = 5.0 ? ; v ge = 15v fig. 12 - typ. transfer characteristics v ce = 50v; tp = 30s 0 20406080100 i c (a) 0 2000 4000 6000 8000 10000 12000 e n e r g y ( j ) e off e on 0 20 40 60 80 100 i c (a) 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 0 20 40 60 80 100 r g ( ? ) 10 100 1000 10000 s w i c h i n g t i m e ( n s ) t r td off t f td on 0246810 v ge , gate-to-emitter voltage (v) 0 50 100 150 200 i c e , c o l l e c t o r - t o - e m i t t e r c u r r e n t ( a ) t j = 25c t j = 175c 0 20406080100 rg ( ? ) 0 2000 4000 6000 8000 10000 12000 14000 16000 e n e r g y ( j ) e off e on
6 www.irf.com irg7ph50upbf/IRG7PH50U-EP fig 19. maximum transient thermal impedance, junction-to-case (igbt) to-247ac fig. 17 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz fig. 18 - typical gate charge vs. v ge i ce = 50a 0 100 200 300 400 500 600 v ce (v) 10 100 1000 10000 c a p a c i t a n c e ( p f ) cies coes cres 0 50 100 150 200 250 300 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) v ces = 600v v ces = 400v 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) i (sec) 0.00296 0.000009 0.08150 0.000180 0.11707 0.003342 0.06917 0.017016 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri c 4 4 r 4 r 4
www.irf.com 7 irg7ph50upbf/IRG7PH50U-EP fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit 0 1k vcc dut l l rg 80 v dut vcc + - fig.c.t.4 - resistive load circuit rg vcc dut r = vcc icm g force c sens e 100k dut 0.0075f d1 22k e force c force e sense fig.c.t.5 - bvces filter circuit fig.c.t.3 - switching loss circuit l rg vcc dut / driver diode clamp / dut -5v
8 www.irf.com irg7ph50upbf/IRG7PH50U-EP fig. wf1 - typ. turn-off loss waveform @ t j = 175c using fig. ct.4 fig. wf2 - typ. turn-on loss waveform @ t j = 175c using fig. ct.4 -200 0 200 400 600 800 1000 1200 -0.5 0 0.5 1 1.5 2 time(s) v ce (v) -20 0 20 40 60 80 100 120 i ce (a) 90% i ce 5% v ce 5% i ce eoff loss t f -200 0 200 400 600 800 1000 1200 -3 -2 -1 0 1 2 3 4 5 time (s) v ce (v) -20 0 20 40 60 80 100 120 i ce (a) test current 90% tes t cur rent 5% v ce 10% test current tr eon loss
www.irf.com 9 irg7ph50upbf/IRG7PH50U-EP

to-247ac package is not recommended for surface mount application.

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10 www.irf.com irg7ph50upbf/IRG7PH50U-EP

ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 07/2010 data and specifications subject to change without notice. this product has been designed and qualified for industrial market. qualification standards can be found on ir?s web site. to-247ad package is not recommended for surface mount application.

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